Investigation of the optical gain of In0.2Ga0.8As/GaAs compressively strained quantum wells
نویسنده
چکیده
The valence hole subbands, the TE and TM mode optical gains and radiative current density of In0.2Ga0.8As/GaAs compressively strained quantum well lasing at 980nm have been studied by using a 6x 6 Hamiltonian model including the heavy hole, light hole and spin-orbit splitting bands. The compressively strain enhances the TE mode optical gains and strongly depresses the TM mode optical gain. A very low threshold current density is predicted for ideal laser diode.
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